Monte Carlo Simulation of Submicron ZnO n+-n –n+ Diode

Abstract

The steady-state electron transport in ZnO n⁺-n –n⁺ diode with 0.25 µm-long active layer was studied using Monte Carlo simulation. Effect of bias voltage changing and different temperature were calculated on electron distribution, potential, electric field and electron drift velocity as a function of distance between anode and cathode.