Simulation of High Field Electron Transport in Wurtzite Phase of ZnO

Abstract

Temperature and doping dependencies of electron drift velocity in wurtzite ZnO structure has been calculated using ensemble Monte Carlo method in steady-state and transient situation. The following scattering mechanisms, i.e, impurity, polar optical phonon and acoustic phonon are included in the calculation. The maximum electron drift velocity that is obtained at room temperature for 10²³ m^-3 donor concentration is 2.2×10⁷cm/s for ZnO. For high applied electric field, transient electron drift velocity shows a significant overshoot.