Study of influence of geometrical structure parameters of InGaN single quantum well laser on time response and power-current characteristics by solving rate equations

Ghasem Alahyarizadeh

Abstract


Abstract A new visual and analytical model has been presented to study effects of structural parameters on laser performance of InGaN single quantum well (SQW) lasers based on solving rate equations by using user friendly programming software, Delphi. This model has provided a graphical user interface (GUI) for researchers by which one can work directly with all laser parameters throughout the simulation work and analysis without the need to access source code [1]. We have studied effects of different parameters such as quantum well thickness, separate confinement heterostructure (SCH) thickness and cavity length on the fundamental characteristics of the laser which include laser time response (P-t), and output power- current (P-I) characteristics. Meanwhile related features such as turn-on delay time of lasing, threshold current and slope efficiency have been investigated.


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